Defect Accumulation and Its Effect on Photoluminescence in GaN Bombarded with Low-energy Heavy Ions  

作　　者：ZhangChonghong SongYin DuanJinglai SunYoumei YaoCunfeng MaHongji NieRui T.Shibayama HongChen 

机构地区：[1]不详 [2]DepartmentofTechnicalPhysics,PekingUniversity,BeiJing,China [3]CenterforAdvancedResearchofEnergyTechnology,HokkaidoUniversity,Sapporo,Japan. [4]InstituteofPhysics,theChineseAcademyofSciences,Beijing,China.

出　　处：《近代物理研究所和兰州重离子加速器实验室年报：英文版》2003年第1期61-61,共1页IMP & HIRFL Annual Report

摘　　要：Gallium Nitride (GaN) is an important material for the development of novel short-wave-length photonicdevices or high-frequency, high-power electronic devices. Ion implantation/irradiation was proved to be an effective method to modify the physical properties of the material. In the present work, we studied the dependence of damage accumulation on irradiation dose and temperature and the corresponding effects on photolumines cence character of the material. Specimens of GaN (n-type doping, (0001) on axis) were irradiated with

关 键 词：光激发光 低能重离子 氮化镓 物理性质 短波光子学 能量光谱 

分 类 号：O433.2[机械工程—光学工程]