Electrical Performance of Electron Irradiated SiGe HBT and Si BJT  

作　　者：WentaoHUANG JilinWANG ZhinongLIU PeiyiCHEN PeihsinTSIEN XiangtiMENG 

机构地区：[1]InstituteofMicroelectronics,TsinghuaUniversity,Beijing100084,China [2]InstituteofNuclearEnergyTechnology,TsinghuaUniversity,Beijing100084,China

出　　处：《Journal of Materials Science & Technology》2004年第6期706-708,共3页材料科学技术（英文版）

基　　金：This project is financially supported by the National Natural Science Foundation of China(No.10075029 and 69836020);National“863”Advanced Research Project of China(No.2002AA3Z1230).

摘　　要：The change of electrical performances of 1 MeV electron irradiated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied. After electron irradiation, both the collector current IC and the base current IB changed a little, and the current gain β decreased a little for SiGe HBT. The higher the electron irradiation fluence was, the lower the IC decreased. For conventional Si BJT, IC and IB increased as well as /? decreased much larger than SiGe HBT under the same fluence. The contribution of IB was more important to the degradation of β for both SiGe HBT and Si BJT. It was shown that SiGe HBT had a larger anti-radiation threshold and better anti-radiation performance than Si BJT. The mechanism of electrical performance changes induced by irradiation was preliminarily discussed.The change of electrical performances of 1 MeV electron irradiated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied. After electron irradiation, both the collector current IC and the base current IB changed a little, and the current gain β decreased a little for SiGe HBT. The higher the electron irradiation fluence was, the lower the IC decreased. For conventional Si BJT, IC and IB increased as well as /? decreased much larger than SiGe HBT under the same fluence. The contribution of IB was more important to the degradation of β for both SiGe HBT and Si BJT. It was shown that SiGe HBT had a larger anti-radiation threshold and better anti-radiation performance than Si BJT. The mechanism of electrical performance changes induced by irradiation was preliminarily discussed.

关 键 词：Electron irradiation SiGe HBT Si BJT Electrical performance 

分 类 号：TN304.2[电子电信—物理电子学]