一族Nd:Y_xGd_(1-x)VO_4混晶性质比较及其调Q性能研究  

Comparisons on the Properties of a Class of Nd:Y_xGd_(1-x)VO_4 Mixed Crystals and Its Q-switching Laser

作　　者：秦连杰[1] 姜付义[1] 孟宪林[2] 徐惠忠[1] 侯学元[2] 祝俐[2] 刘均海[2] 

机构地区：[1]烟台大学环境与材料工程学院,烟台264005 [2]山东大学,济南250100

出　　处：《人工晶体学报》2004年第5期868-870,834,共4页Journal of Synthetic Crystals

摘　　要：Czochralski法成功生长了一系列不同Gd／Y的低掺杂Nd:YxGd1-xVO4混晶,并对它们的一些基本性质进行了比较,发现随着Gd含量的增加,晶体晶胞a,c轴常数呈线性增长,故YVO4和GdVO4晶体可以实现无限互溶。少量Gd掺杂可使混晶晶体比热和荧光寿命增大,并有效地增强了其荧光强度。我们对该晶体的低功率泵浦下的Cr4+:YAG调Q激光性能也进行了研究,发现Nd:YxGd1-xVO4混晶具有良好调Q性能。A class of Nd:YxGd1-xVO4 mixed crystals with low Nd3+ ion concentrations was successfully grown by the Czochralski method. The elementary properties of them were investigated and found that the a, c contents of one cell were linear with the Gd content in mixed crystal. The infinite soluble Nd:YxGd1-xVO4 solution should be existed between YVO4 and GdVO4. The little Gd doping enhanced the properties of specific heats, fluorescence lifetimes and so on. Passive Q-switched properties of the Nd:YxGd1-x VO4 laser with a Cr4 + :YAG crystal saturable absorber are experimentally investigated.

关 键 词：掺钕钒酸钇 掺钕钒酸钆 混晶 晶体生长 调Q性能 激光晶体 Czoehralski法 

分 类 号：O614.511[理学—无机化学] TN244[理学—化学]