集成电路的二次封装屏蔽硬X射线研究  

Research on secondary package shielding of hard X-rays for integrated circuits

作　　者：郭红霞[1] 韩福斌[1] 陈雨生[1] 谢亚宁[2] 黄宇营[2] 何伟[2] 胡天斗[2] 卫宁 于伦正 

机构地区：[1]西北核技术研究所,西安710024 [2]中国科学院高能物理研究所,北京100049 [3]骊山微电子公司,西安710075

出　　处：《核技术》2004年第12期968-970,共3页Nuclear Techniques

摘　　要：在集成电路X射线剂量增强效应研究的基础上,提出对典型器件开展硬X射线二次封装屏蔽加固技术研究。首先用Monte Carlo方法进行了模拟计算。结果表明,针对硬X射线选用高Z材料作二次封装材料可以达到较好的屏蔽效果。根据计算的结果,在北京同步辐射装置上,利用已经建立的存储器测试系统,对采用不同厚度封装材料的二次封装集成电路SRAM 62256作了屏蔽效应实验,证实了采用二次封装屏蔽加固技术方法后,电路抗X射线的总剂量失效阔值提高了一个量级。建立的屏蔽加固方法对提高器件抗辐射能力具有重要意义。On the basis of study of X-ray dose enhancement effect for integrated circuits, hardening technology of secondary package shielding is proposed for typical devices. In the paper, Monte Carlo method was used for calculating the shielding effect. It has been proven that the shielding with high Z material (e.g. tungsten, tantalum) as package stuff is effective against X-ray according to the simulation results, the secondary package technology can therefore be adopted for typical semiconductor devices. Using the established test setup, an experiment on validation of this technology was made on BSRF. SRAM 62256 with different thicknesses of package material is chosen in the experiment. Tolerance X-ray dose for the IC is found to increase by one order of magnitude. The established method is very important for improving the hardening level of IC.

关 键 词：蒙特卡罗模拟 硬X射线 屏蔽 加固技术 

分 类 号：O434.1[机械工程—光学工程] TN305.94[理学—光学]