Difference in electron-and gamma-irradiation effects on output characteristic of color CMOS digital image sensors  

作　　者：MENGXiangti KANGAiguo ZHANGXimin LIJihong HUANGQiang LIFengmei LIUXiaoguang ZHOUHongyu 

机构地区：[1]InstituteofNuclearEnergyTechnology,TsinghuaUniversity,Beijing100084,China [2]InstituteofLowEnergyNuclearPhysics,BeijingNormalUniversity,Beijing100875,China

出　　处：《Rare Metals》2004年第2期165-170,共6页稀有金属（英文版）

基　　金：This project is financially supported by the Narional Natural Science Foundation of China(Nos 10375034 and 10075029) and the Basic Research Foundation of Tsinghua University (No. JC2002058).

摘　　要：Changes of the average brightness and non-uniformity of dark output images,and quality of pictures captured under natural lighting for the color CMOS digital image sensorsirradiated at different electron doses have been studied in comparison to those from theγ-irradiated sensors. For the electron-irradiated sensors, the non-uniformity increases obviouslyand a small bright region on the dark image appears at the dose of 0.4 kGy. The average brightnessincreases at 0.4 kGy, increases sharply at 0.5 kGy. The picture is very blurry only at 0.6 kGy,showing the sensor undergoes severe performance degradation. Electron radiation damage is much moresevere than γ radiation damage for the CMOS image sensors. A possible explanation is presented inthis paper.Changes of the average brightness and non-uniformity of dark output images,and quality of pictures captured under natural lighting for the color CMOS digital image sensorsirradiated at different electron doses have been studied in comparison to those from theγ-irradiated sensors. For the electron-irradiated sensors, the non-uniformity increases obviouslyand a small bright region on the dark image appears at the dose of 0.4 kGy. The average brightnessincreases at 0.4 kGy, increases sharply at 0.5 kGy. The picture is very blurry only at 0.6 kGy,showing the sensor undergoes severe performance degradation. Electron radiation damage is much moresevere than γ radiation damage for the CMOS image sensors. A possible explanation is presented inthis paper.

关 键 词：semiconductor technology irradiation damage electron and gamma irradiation color CMOS image sensor output characteristic SI 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]