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作 者:CAOMinghe YUANJun CAOMingli ZHOUDongxiang
机构地区:[1]DepartmentofMaterialsofScienceandEngineering,TsinghuaUniversity,Beijing100084,China [2]StateKeyLaboratoryofAdvancedTechnologyforMaterialsSynthesisandProcessing,WuhanUniversityofTechnology,Wuhan430070,China [3]DepartmentofElectronicScienceandTechnology,HuazhongUniversityofScienceandTechnology,Wuhan430074,China
出 处:《Rare Metals》2004年第3期274-278,共5页稀有金属(英文版)
基 金:This work is financially supported by the Postdoctoral Research Foundation of the Chinese Education Ministry (No. 023202238)
摘 要:The relationship of electrical properties of Mn-doped Ba_(0.92)Ca_(0.08)TiO_3PTCR (positive temperature coefficient resistance) ceramics with two sintering schedules wasdiscussed. Using TEM (transmission electron microscope) combined with EDS (energy dispersive X-rayspectrometer), the Mn ions distributed at grain boundaries were analyzed. The results show that thePTCR effect of Mn-doped PTCR ceramics is more dependent on the sintering schedule than those of Mnfree. The phenomenon may be caused by the valence states variance of Mn ions segregated at the grainboundaries.The relationship of electrical properties of Mn-doped Ba_(0.92)Ca_(0.08)TiO_3PTCR (positive temperature coefficient resistance) ceramics with two sintering schedules wasdiscussed. Using TEM (transmission electron microscope) combined with EDS (energy dispersive X-rayspectrometer), the Mn ions distributed at grain boundaries were analyzed. The results show that thePTCR effect of Mn-doped PTCR ceramics is more dependent on the sintering schedule than those of Mnfree. The phenomenon may be caused by the valence states variance of Mn ions segregated at the grainboundaries.
关 键 词:positive temperature coefficient resistance grain boundaries sinteringschedule SEGREGATION potential barrier
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