光电池在光强测量中的最佳使用条件  

The Best Using Method of Silicon Photovoltaic Cell in Light Strength Measurment

作　　者：计齐根[1] 

机构地区：[1]南京师大物理系

出　　处：《南京师大学报（自然科学版）》1993年第2期38-41,共4页Journal of Nanjing Normal University(Natural Science Edition)

摘　　要：从理论和实验上探讨了硅光电池的光电转换性能。推导了在光强测量实验中光电池光生伏特和光生电流与外接测量线路电阻的关系。指出了硅光电池的最佳使用条件,并设计出测量线路。The photoelectric transition property of Silicon photo-voltaic Cell was examined theoreticallyand experimentally.A releationship between photoelectric voltage,Current and resistance of measuringnetwork had established.The best way for cell using was showed,and a measuring network was also designed.

关 键 词：光电池 光强度测量 

分 类 号：O432.2[机械工程—光学工程]