表面活性剂浓度对介孔氧化硅薄膜结构和性能的影响研究  

Investigation of Surfactant Concentration Effect on the Mesostructure and Dielectric Properties of Mesoporous Silica Films

作　　者：吴兆丰[1] 吴广明[2] 姚兰芳[2] 

机构地区：[1]盐城工学院基础部,江苏盐城224003 [2]同济大学波耳物理研究所,上海200092

出　　处：《盐城工学院学报（自然科学版）》2004年第4期9-12,共4页Journal of Yancheng Institute of Technology:Natural Science Edition

基　　金：国家自然科学基金委重点基金项目 (2 0 1330 4 0 ) ;国家高技术 86 3计划 (2 0 0 2AA84 2 0 5 2 )

摘　　要：报道了一种新型纳米多孔氧化硅薄膜的制备方法 ,并详细探讨了表面活性剂浓度对介孔氧化硅薄膜结构和性能的影响。以十六烷基三甲基溴化铵 (CTAB)为模板剂 ,正硅酸乙酯为硅源 ,盐酸为催化剂 ,采用溶胶 -凝胶技术 ,通过提拉法制备了二氧化硅透明介孔薄膜。用红外光谱、小角XRD、原子力显微镜对样品进行了表征 ,并采用椭偏仪和阻抗分析仪测量薄膜的折射率和介电常数。该薄膜具有很低的介电常数和较好的机械强度 。A novel route to prepare mesoporous SiO2 films is reported in this paper. The influence of CTAB concentration on the structure and properties of mesoporous silica films is studied as well. Silicate sols are prepared with the precursor TEOS and template CTAB catalyzed by hydrochloric acid. The films are prepared by Dip-coating process. FTIR, XRD and AFM are used to characterize the films.The refractive index and dielectric constant are measureed by Ellipsometer and impedance analysis apparatus. It has been found that the films have low dielectric constant and good mechanical properties. Preliminary results present a very positive prospective for intermetal dielectric applications.

关 键 词：溶胶-凝胶技术 介电常数 多孔氧化硅 薄膜 

分 类 号：O484[理学—固体物理]