Ag-TCNQ金属/有机双层膜中的扩散机制  

Diffusion mechanism in Ag-TCNQ thin film with copper as tracers

作　　者：刘平[1] 蒋益明[1] 谢亨博[1] 郭峰[1] 李劲[2] 

机构地区：[1]复旦大学 [2]复旦大学材料科学系,教授上海市200433

出　　处：《材料研究学报》2004年第6期606-610,共5页Chinese Journal of Materials Research

基　　金：国家自然科学基金10374015国家重点基础研究发展规划2002CB613504上海市科委0259nm089资助项目.

摘　　要：研究了用真空分层蒸镀法获得的金属/有机双层膜(Ag-TCNQ)中的层间扩散行为.根据Cu、Ag在与TCNQ形成络合物时表现出的相似性,建立了异质元素标志法,以Cu为标志元素,研究了金属有机络合物Ag-TCNQ形成过程中Ag扩散的微观机制.使用二次离子质谱(SIMS)分析了Cu、Ag元素在不同样品膜中的浓度分布及变化情况.结果表明,不同于纯金属薄膜中Cu、Ag清晰的界面,在络合物中的Cu与Ag之间存在交叉,说明两种离子之间存在着交换现象.由此可以推断,薄膜中的扩散机制是Ag离子在Ag-TCNQ络合物中的换位扩散.Metal-organic thin films (Ag-TCNQ) were prepared by successive vacuum evaporation of Ag and TCNQ. The tracer method, with Cu as tracers, was established and used to investigate the diffusion behavior in Ag-TCNQ complex because Cu exhibits the same properties as Ag when reacting with TCNQ. The depth profiles of the thin films were measured by secondary ion mass spectroscopy (SIMS). SIMS analysis shows that there exists ion exchange between Cu and Ag, which is different from the clear interface between Cu and Ag in the metal films. The diffusion mechanism in Ag-TCNQ thin film is silver diffusion accompanying with ion exchange.

关 键 词：材料科学基础学科 换位扩散 异质元素标志法 SIMS AG TCNQ薄膜 

分 类 号：O484[理学—固体物理]