一种基于单电子晶体管的二阶低通滤波器  

A Second-Order Low-Pass Filter Based on Single Electron Transistors

作　　者：陈学军[1] 蔡理[2] 孙铁暑[2] 

机构地区：[1]海军航空工程学院青岛分院基础部,山东青岛266041 [2]空军工程大学工程学院,陕西西安710038

出　　处：《微电子学》2004年第6期675-677,681,共4页Microelectronics

基　　金：陕西省自然科学基金资助项目(2002F34);空军工程大学学术基金资助项目(2002X12)

摘　　要：　在研究单电子晶体管(SET)I-V特性的基础上,阐明了一种分区处理法,设计了一个SET积分器电路。并据此实现了一个SET二阶低通滤波器,说明了该滤波器的工作条件、结构、性能、参数和特点。仿真结果表明,该滤波器的传输特性与采用其它两种方法描述SETI-V特性所构成的滤波器的传输特性有良好的一致性。文中所提出的SETI-V特性分区处理法,同样适用于SET在其它功能电路中的应用。Based on the investigation of the I-V characteristics of single electron transistors (SET), an SET integrator is designed, with which a second-order low-pass filter is realized. Also, operating conditions, configuration, performance, parameters and characteristics of the filter are dealt with. The simulation results show that the transmission performance of the filter corresponds to that of filters based on SET's whose I-V characteristics is described by two other methods. The zoned treatment method for SET I-V characteristics presented in the paper is also applicable for SET's in other functional circuits.

关 键 词：单电子晶体管 I-V特性 积分器 低通滤波器 传输特性 

分 类 号：TN321[电子电信—物理电子学]