纳米薄膜厚度的X射线测量  

THICKNESS MEASUREMENT OF NANOMETER FILMS BY XRD

作　　者：赖倩茜[1] 李戈扬[1] 竺品芳[1] 毛顺娟[2] 

机构地区：[1]上海交通大学金属基复合材料国家重点实验室,上海200030 [2]上海交通大学高温材料及高温测试教育部开放实验室,上海200030

出　　处：《理化检验（物理分册）》2000年第12期549-551,共3页Physical Testing and Chemical Analysis(Part A:Physical Testing)

摘　　要：研究了通过小角度 X射线衍射 (XRD)技术测量纳米薄膜沉积厚度与沉积速率的方法 ,并测定了在 Si C表面沉积 Fe纳米薄膜的厚度和沉积速率。结果表明 ,采用小角度 XRD技术测量纳米薄膜厚度和沉积速率 ,能克服基片性质、表面平整度和金属膜氧化的影响 ,准确。Thickness measurement and control of nanometer films couldnt be conducted easily because of the effects of the properites of variant substrates, surface smoothness and oxidization of metal films. In this paper, measurement of thickness and deposition rate of multilayer nanometer films by XRD of was discussed and Fe nanometer films on SiC were measured by this method. The results show that small angle XRD method can avoid the influence of the factors mentioned above and measure the thickness and deposition rate of nanometer films accurately and conveniently.

关 键 词：纳米薄膜 X射线测量 小角度 XRD 沉积速率 基片 X射线衍射 技术测量 表面沉积 厚度 

分 类 号：TB383[一般工业技术—材料科学与工程] TG174[金属学及工艺—金属表面处理]