一种制备金属有机电双稳薄膜的新方法  

A novel method for growing metal -org anic bistable thin film

作　　者：蒋益明[1] 郭峰[1] 谢亨博[1] 李劲[1] 华中一[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《功能材料与器件学报》2004年第4期463-466,445,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金(No.10374015);"973"项目(No.2002CB613504);上海市科委纳米专项(No.0259nm089)

摘　　要：提出了一种真空蒸发和电化学反应相结合的技术来制备金属有机络合物电双稳薄膜的新方法。利用该方法制备的Ag-TCNQ薄膜具有均匀的电双稳特性,其跃迁阈值电压4.5V,跃迁时间小于20ns。同时该方法还兼顾了真空反应蒸发方法表面平整度高和化学溶液法化学配比严格的优点。因而该方法在微电子器件、分子电子器件和海量存贮器的制备中有着广泛的应用前景。A novel method by combining vacuum d eposition and electrochemical reaction was developed to prepare metal -organic thin films .Ag -TCNQ film prepared by this method shows an electrical bistable characteristic with a good homogeneity.The threshold voltage of the film is 4.5V and the switching time is less than 20ns.It a lso has a smooth surface morphology a nd a stoichiometric com -position.The method is helpful for m aking micro -electronic devices,mo lectroic devices and high density memories.

关 键 词：电双稳薄膜 真空蒸发 电化学反应 Ag—TCNQ 

分 类 号：O484.1[理学—固体物理]