钼酸钡薄膜的室温电化学制备工艺技术研究  

Study on the preparation of highly crystallized BaMoO_4 film by an electrochemical method at room temperature

作　　者：陈连平[1] 肖定全[1] 毕剑[1] 余萍[1] 杨祖念[1] 于光龙[1] 朱建国[1] 

机构地区：[1]四川大学材料科学系,四川成都610064

出　　处：《功能材料》2005年第1期127-128,132,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50372042)

摘　　要：采用恒电流型电化学技术在室温环境下制备出了结晶良好的致密的钼酸钡薄膜;深入研究了沉积时间、pH值对薄膜生长的影响,找到了比较适宜的制备工艺;分析讨论了沉积时间对晶格常数的影响.在本实验条件下,溶液的碱度调控在13～14之间时,可以通过阳极氧化法得到结晶良好的BaMoO4薄膜;当电流密度为1mA/cm2及电极间距为2cm时,如果要得到致密的薄膜,沉积时间必须在100min以上.Using a constant direct current technique, highly crystallized polycrystalline thin films of single-phase BaMoO4 have been prepared on an anodic molybdenum substrate in an alkaline solution containing barium ions at room temperature. Effects of different depositing time durations and pH values on the films have been discussed. Proper preparation processing has been found. Also, the effect of depositing time duration on the lattice parameters has been discussed. By controlling the pH value of Ba(OH)2 solution between 13 and 14, well-crystallized BaMoO4 films can be deposited on an anodic molybdenum substrate. Moreover, in order to obtain compacted thin films, the depositing time must be longer than 100 minutes when the current density was 1 mA/cm2.

关 键 词：恒电流技术 电化学 钼酸钡 薄膜 

分 类 号：TB383[一般工业技术—材料科学与工程] O646.542[理学—物理化学]