化学合成法改进对ZnO压敏电阻片复合粉体的影响  

Effect of Improvement of Chemical Synthesis Process on Composite Powder for ZnO Varistors

作　　者：王玉平[1] 李盛涛[2] 

机构地区：[1]西安电瓷研究所,陕西西安710077 [2]西安交通大学电气绝缘国家重点实验室,陕西西安710049

出　　处：《电瓷避雷器》2004年第6期20-25,共6页Insulators and Surge Arresters

摘　　要：通过对化学合成法进行改进以适应ZnO压敏电阻片复合添加剂制备的需要,针对化学合成法的不足,提出了解决技术籽晶分布包膜技术,通过控制籽晶、沉淀剂、分散剂、pH值、化学反应进程和温度等因素,获得离子级均匀混合的ZnO压敏电阻片复合添加剂复合粉体前驱体,为进一步获得高性能ZnO压敏电阻片打下了坚实的基础。Improvement of chemical synthesis process has been implemented to meet need for preparation of composite additives for ZnO varistors.Aimed at shortcoming of the process,a series of solution is proposed such as dispersed filming of seek,by controlling seed,precipitant,pH value,chemical reaction process and temperature,a ion-level uniform dispersed composition powder previously body is obtained,laying a solid foundation for development of ZnO varistor of high level.

关 键 词：氧化锌压敏电阻片 化学合成法 粉体 籽晶 沉淀 

分 类 号：TM54[电气工程—电器]