金属有机化学气相外延生长1310nm偏振无关混合应变量子阱半导体光放大器研究  

MOVPE growth of 1310nm polarization-insensitive strained quantum-well semiconductor optical amplifiers

作　　者：马宏[1] 朱光喜[2] 陈四海[1] 易新建[1] 

机构地区：[1]华中科技大学光电子工程系,武汉430074 [2]华中科技大学电子与信息工程系,武汉430074

出　　处：《物理学报》2004年第12期4257-4261,共5页Acta Physica Sinica

基　　金：中国博士后科学基金资助的课题~~

摘　　要：采用低压金属有机化学气相外延设备进行了 1 3μm压应变量子阱材料、张应变量子阱材料和混合应变量子阱材料的生长研究 .通过x射线双晶衍射和光致发光谱对生长材料进行测试和分析 .基于四个压应变量子阱和三个张应变量子阱交替生长的混合应变量子阱 ( 4CW3TW)结构有源区 ,并采用 7°斜腔脊型波导结构以有效抑制腔面反射 ,经蒸镀减反膜后 ,半导体光放大器光纤 光纤小信号增益达 2 1 5dB ,在 12 80— 1340nm波长范围内偏振灵敏度小于 0 6dB .The compressively-strained quantum wells,tensile-strained quantum wells and the combination of tensile-strained and compressively-strained quantum wells were grown by metal-organic vapor phase epitaxy,the materials properties were measured by photoluminescence spectra and x-ray double-crystal diffraction. A polarization-insensitive multiple-quantum-well optical amplifier for 1310?nm wavelength employing both compressively-strained wells and tensile-strained wells in active region is reported. The amplifier was fabricated to ridge waveguide structure with 7° tilted cavity,the two facets were coated with anti-reflection thin films. The amplifier exhibited an excellent polarization insensitivity (less than 0 6?dB) over the entire range of wavelength (1 28-1 34?μm) and a fiber to fiber gain of 21 5?dB at bias current of 200?mA.

关 键 词：应变量子阱 半导体光放大器 偏振无关 CW 波导结构 低压金属有机化学气相外延 偏振灵敏度 减反膜 蒸镀 光致发光谱 

分 类 号：TN722[电子电信—电路与系统]