溴碘化银T-颗粒乳剂晶体的表面形貌研究  

Morphology of the Silver Iodobromide T-grain Crystal Surface

作　　者：曹立志[1] 梁笑丛[1] 焦家俊[1] 庄思永[1] 

机构地区：[1]华东理工大学精细化工研究所,上海200237

出　　处：《高等学校化学学报》2005年第1期142-145,共4页Chemical Journal of Chinese Universities

基　　金：国家自然科学基金 (批准号 :2 0 0 73 0 13 )资助

摘　　要：用原子力显微镜研究了 T-颗粒卤化银晶体、掺杂有浅电子陷阱掺杂剂 K4 [Ru(CN) 6 ]的掺杂乳剂晶体、经硫加金化学增感后的掺杂乳剂晶体的表面形貌以及曝光后表面形貌的变化 .观察结果表明 ,T-颗粒晶体表面存在很多突起 ,经曝光后这些突起高度增加 ,更集中 .掺入浅电子陷阱掺杂剂 K4 [Ru(CN) 6 ]后 ,T-颗粒晶体对光更敏感 ,曝光后表面突起高度的增加幅度大于未掺杂乳剂光照后表面高度的变化 .同时硫增感剂对表面突起的分布也有很大的影响 .The morphologies of the silver iodobromide T-grain crystal surface, the doped emulsion crystal surface with the dopant K 4[Ru(CN) 6] and the sulfur plus gold sensitized doped emulsion crystal surface were observed. The effects of the light exposure on above crystal surfaces were also studied with AFM. The results show that while the grain surfaces appear to be flat when observed with a common electron microscope or an atomic force microscope with a low resolution power, many hills were revealed on the crystal surface with a high resolution power. After exposure the in situ observation showed that both the heights and sizes of the hills increased. The dopant might affect the amount of the hills. After sulfur plus gold sensitization, the arrangement of the hills turned more regular.

关 键 词：原子力显微镜 T-颗粒晶体 表面形貌 浅电子陷阱掺杂剂 

分 类 号：TQ57[化学工程—精细化工]