基区重掺杂对突变AlGaAs/GaAs HBT电学性能的影响  

Effect of Heavy Doping in the Base on Electronic Property of Abrupt AlGaAs/GaAs HBT

作　　者：周守利[1] 崇英哲[1] 黄永清[1] 任晓敏[1] 

机构地区：[1]北京邮电大学光通信中心,北京100876

出　　处：《半导体光电》2004年第6期489-492,共4页Semiconductor Optoelectronics

基　　金：国家"973"计划项目 (2 0 0 3CB3 1 490 1 ) ;高等学校博士学科点专项科研基金资助项目 (2 0 0 2 0 0 1 3 0 1 0 )

摘　　要：　基区重掺杂不仅使基区能带发生变窄效应(BGN),且使突变结界面势垒形状及高度均发生了扰动,这两种因素都对电流输运特性产生重要的影响。基于热场发射 扩散模型,分析了基区重掺杂突变AlGaAs/GaAsHBT中的电流传输特性。结果表明:为了精确描述电流传输,必须考虑突变结界面势垒形状及高度扰动所引起的电流变化。The heavy doping in the base results in not only the band gap narrowing (BGN), but also the disturbance of the shape and height of energy barriers which control the current through these interfaces. Based on thermionic-field-diffusion model, the current transport properties of abrupt AlGaAs/GaAs HBT with heavy doping in the base is analyzed. The results show that for a better description of the current transport properties for abrupt AlGaAs/GaAs HBT, the current variance caused by the disturbance of the energy barriers at abrupt junction interface must be taken into account.

关 键 词：热场发射扩散 能带变窄效应 Jain—Roulston模型 

分 类 号：TN325[电子电信—物理电子学]