火焰水解法制备硅基二氧化硅材料的析晶研究  

Crystallization of Silicon-based Silica Materials Prepared by Flame Hydrolysis

作　　者：郜定山[1] 李建光[1] 安俊明[1] 李健[1] 夏君磊[1] 王红杰[1] 胡雄伟[1] 

机构地区：[1]中国科学院半导体研究所光电子研究发展中心,北京100083

出　　处：《半导体光电》2004年第6期496-498,共3页Semiconductor Optoelectronics

基　　金：国家重点基础研究发展规划资助项目(G2 0 0 0 0 3 660 2 ) ;国家高技术研究发展计划资助项目(2 0 0 2AA3 1 2 2 60 ) ;国家自然科学基金资助项目 (6988970 1 )

摘　　要：　用火焰水解法在硅基片上制备了掺杂GeO2和B2O3的SiO2光波导材料。用X射线物相衍射法(XRD)分析了掺杂和烧结工艺对材料的析晶现象的影响。结果表明,当烧结时采取自然降温,GeO2 SiO2材料由于严重析晶而完全碎裂;而当烧结后期采取快速降温,析晶过程受到很大抑制,但仍有析晶。在此GeO2 SiO2材料中掺入适量的B2O3后,得到了完全非晶态的GeO2 B2O3 SiO2材料,但B2O3掺入量过多时,又会导致析晶。GeO_2-and B_2O_3-doped silica optical waveguide materials were prepared on silicon substrate by flame hydrolysis deposition.The effects of doping and sinter procedures on crystallization of these materials were analysed using X-ray diffraction method (XRD).The results show that the GeO_2-SiO_2 material is fully cracked due to severe crystallization when sintered at natural temperature droping. However, the crystallization process can be prevented when quick temperature doping is adopted at the sinter end, but crystallization still exist in this situation. When proper amount of B_2O_3 is doped into the GeO_2-SiO_2 material,complete noncrystalline GeO_2-B_2O_3-SiO_2 material can be fabricated,but excessive B_2O_3 doping will crystallize again.

关 键 词：火焰水解 二氧化硅 析晶 二氧化锗 三氧化二硼 

分 类 号：TN304.055[电子电信—物理电子学]