100kA微秒导通时间等离子体断路开关研究  

Research of 100 kA microsecond-conduction-time plasma opening switch

作　　者：陈林[1] 孙承纬[1] 姜巍[1] 王刚华[1] 吴守东[1] 姚斌[1] 李晔[1] 徐敏[1] 

机构地区：[1]中国工程物理研究院流体物理研究所,四川绵阳621900

出　　处：《强激光与粒子束》2005年第1期135-139,共5页High Power Laser and Particle Beams

基　　金：国防科技基础研究基金资助课题

摘　　要：研制了最大导通电流约为100kA的微秒导通时间等离子体断路开关,开展了该导通电流下的 等离子体断路开关性能实验,得到的负载电流上升时间为54～76ns,最高开关电压为1.38MV,最高电压倍增 系数达到4.9。建立了导通阶段开关区等离子体运动的二维雪耙模型,初步数值模拟结果表明,该模型对目前 开展的实验有较好的预估能力。The experiments of microsecond conduction time plasma opening switch (POS) which has been operated at 100 kA current level are reported in this paper. As a result, the rise time of load current is between 54 to 76 ns. The maximal POS voltage of 1.38 MV is obtained with the 200 nH inductive load, and a factor of voltage multiplication up to 4.9 is achieved. In addition, a 2D snowplow model of POS conduction phase has been developed. The sequence of snowplow fronts in POS conduction phase is obtained from the simulation. The primary results show that the model has well predictability.

关 键 词：等离子体断路开关 等离子体枪 延时 等离子体密度 二维雪耙模型 

分 类 号：TM836[电气工程—高电压与绝缘技术]