HgCdTe钝化过程中形成的镶嵌结构及其热处理效应  

Mosaic Structure and Heating Treatment of Passivated HgCdTe

作　　者：孙涛[1] 王庆学[1] 陈文桥[1] 梁晋穗[1] 陈兴国[1] 胡晓宁[1] 李言谨[1] 

机构地区：[1]中国科学院上海技术物理研究所功能材料器件中心,上海200083

出　　处：《Journal of Semiconductors》2005年第1期62-66,共5页半导体学报（英文版）

摘　　要：通过高分辨X射线衍射仪中的二维点阵研究了溅射的CdTe介质膜对HgCdTe外延层的影响 .发现在高溅射能量下沉积的钝化膜由于应力的作用 ,HgCdTe晶片出现弯曲及大量镶嵌结构 。The epitaxial layer of HgCdTe passivated by CdTe is investigated with high-resolution two-dimensional mapping of X-ray diffraction.It is found that the wafer of HgCdTe is bended and mosaic structure is also observed because of the sputtered passivation layer.The bended wafer and mosaic structure can be recovered by suitable heating treatment.

关 键 词：HGCDTE CDTE 钝化 二维点阵 

分 类 号：TN205[电子电信—物理电子学]