空穴缓冲层CuPc对有机电致发光器件特性的影响  

Influence of Hole Buffer Layer CuPc on Properties of Organic Light-Emitting Devices

作　　者：郑代顺[1] 张旭[2] 钱可元[1] 

机构地区：[1]清华大学深圳研究生院,深圳518055 [2]甘肃联合大学数信学院,兰州730000

出　　处：《Journal of Semiconductors》2005年第1期78-83,共6页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (批准号 :60 2 760 2 6)~~

摘　　要：采用旋涂和真空蒸发沉积工艺制备了结构分别为ITO/PVK :TPD/Alq3 /Al和ITO/PVK :TPD/LiBq4/Alq3 /Al的绿色和蓝色有机电致发光器件 (OLED) ,并研究了空穴缓冲层CuPc对OLED特性的影响 .结果发现 :对于绿色OLED ,CuPc的加入提高了器件的电流和亮度 ,改善了器件的性能 ;而对于蓝色OLED ,CuPc的加入则加剧了载流子的不平衡注入 ,导致器件性能恶化 .这表明空穴缓冲层CuPc对不同结构OLED的特性具有不同的影响 。The green organic light-emitting device(OLED) ITO/PVK∶TPD/Alq 3/Al and blue OLED ITO/PVK∶TPD/LiBq 4/Alq 3/Al are fabricated by spin and vacuum deposition.Influence of hole buffer layer CuPc on the properties of OLED is studied.The results show that for the green OLED,the electron current and brightness are increased by the addition of CuPc,and the performance of the green OLED is enhanced.For the blue OLED,the addition of CuPc induces the imbalance injection of charge carriers,which deteriorates the properties of the blue OLED.This indicates that the effect of CuPc on the properties of different OLED is different.Theses results are explained with the energy level structure schematics of green and blue OLEDs.

关 键 词：空穴缓冲层 CUPC 绿色和蓝色OLED 注入势垒 空间电荷 

分 类 号：TN383.1[电子电信—物理电子学]