粉料埋烧的TiO_2瓷致密性和微观规整性研究  

Influence of Burying Sintering Process on Compactness and Microtacticity of TiO_2 Varistor Ceramics

作　　者：孟凡明[1] 孙兆奇[1] 

机构地区：[1]安徽大学物理与材料科学学院,安徽合肥230039

出　　处：《电子元件与材料》2005年第2期11-12,共2页Electronic Components And Materials

基　　金：安徽省自然科学基金(01044901);安徽省教育厅科研基金资助项目(99JL0024)

摘　　要：通过与裸烧工艺的对比实验,研究了粉料埋烧对 TiO_2陶瓷性能的影响。采用金相显微分析、密度测量、压敏电压测量和介电测量等实验手段,分析了埋烧的作用机理。结果表明,采取粉料埋烧有利于晶粒均匀生长、促使陶瓷致密(密度达 4.112 g·cm–3)、降低压敏电压(E10mA=5.4 V·mm–1),同时提高了介电常数(εra=7.61×104)。该研究结果为 TiO_2基低压压敏电阻器的研制探索出一条新途径。Studied was the influence of burying sintering process on TiO2 varistor ceramics by comparing with traditional sintering process. Based on the results of metallographs analysis, density measurements, breakdown voltage measurements and dielectric measurements, the working mechanism was analyzed. It is found that burying sintering process is beneficial to grain increment, and the burying sintering sample exhibits a bigger density of 4.112 g·cm–3, a lower breakdown voltage (E10mA) of 5.4 V·mm–1 and a higher apparent dielectric constant of 7.61×104. The results will give a new way for research on the low voltage TiO2-based varistor.

关 键 词：电子技术 TIO2压敏陶瓷 压敏电压 密度 晶粒结构 粉料埋烧 致密性 规整性 

分 类 号：TN304[电子电信—物理电子学] TN379