稀土Gd掺杂SnSb多组份涂层电极制备的实验研究  

STUDY ON PREPARING DSA OF RARE EATRH Gd DOPING SnSb

作　　者：王静[1] 冯玉杰[2] 

机构地区：[1]黑龙江科技学院资源与环境工程学院,哈尔滨150027 [2]哈尔滨工业大学市政环境工程学院,哈尔滨150001

出　　处：《环境化学》2005年第1期27-30,共4页Environmental Chemistry

基　　金：国家自然科学基金资助项目 ( 5 0 2 780 2 2 )

摘　　要：采用溶胶 凝胶技术 ,以无机盐SnCl4·5H2 O ,Sb2 O3 ,Gd2 O3 为前驱体 ,制备稀土Gd掺杂Sn ,Sb溶胶 ,以钛电极为基材制备Sn ,Sb ,Gd多组分的涂层电极 .考察了不同热处理温度、不同稀土掺杂量下制备的电极 ,以苯酚为目标有机物的电化学降解特性 ,并对稀土Gd掺杂SnSb涂层电极进行了SEM ,XPS等表征 ,结果表明 :在热处理温度为 70 0℃、稀土掺杂量 (原子质量比 )为 :Sn∶Sb∶Gd =10 0∶6∶1的电极降解效果最好 ;Sol-Gel method is used to preparing multiple oxide thin film.This paper is using SnCl 4·5H 2O, Sb 2O 3,Gd 2O 3 as the precursor to prepare the film of Gd doping Sn,Sb on Ti and using different anode by different temperature and different value of doping Rare earth Gd to degradation the solution of phenol. Experimental results show that temperature and the value of Gd are two important factors of preparing DSA. On the condition of our experiment, it shows that the anode by 700℃ and the value of Sn ∶Sb ∶Gd=100 ∶6 ∶1 is acquired, and doping Gd is benefit for the improvement of DSA electrocatalytic ability.

关 键 词：制备 组份 热处理温度 SB2O3 涂层 掺杂 电极 稀土 SNCL4·5H2O 量比 

分 类 号：O646[理学—物理化学]