Cu(SCN)_2-水系电沉积制备CuSCN薄膜  

Preparation of p-CuSCN Thin Film by Electrochemical Deposition in Aqueous Solution

作　　者：华缜[1] 靳正国[1] 武卫兵[1] 程志捷[1] 

机构地区：[1]天津大学先进陶瓷与加工技术教育部重点实验室,材料学院天津300072

出　　处：《应用化学》2005年第2期138-141,共4页Chinese Journal of Applied Chemistry

基　　金：天津市自然科学基金重点资助项目(F103004)

摘　　要：用电化学沉积法,以水作溶剂,在ITO透明导电玻璃上制得p-CuSCN薄膜。探讨了Cu(SCN)2-在水溶 液中的不稳定性及EDTA络合对提高CuSO4和KSCN水溶液稳定性的作用。研究结果表明,未加EDTA络合 剂时,CuSO4和KSCN在水溶液中将分解成CuSCN和(SCN)x;加入EDTA可以制得稳定的CuSO4和KSCN的 水溶液;在-400mV恒电位下,在EDTA与Cu2+的摩尔比为1∶1的水溶液中可以制备出在可见光区透光性好 的CuSCN薄膜,薄膜的平均粒径约为50nm,是p型的β- CuSCN半导体,光学带隙为3.8eV,测得的表面电导 率为0.8×10-3S/cm。CuSCN thin films were prepared by the electrodeposition method from an EDTA-chelated Cu(Ⅱ) and KSCN aqueous solution. The instability of Cu(SCN)_2 in water and function of EDTA complexant on improving the stability of CuSO 4 and KSCN solution were studied. The results show that Cu(SCN) 2 can transform into CuSCN and (SCN) x in the absence of EDTA; a stable aqueous electrolyte is obtained in the presence of EDTA. Transparent CuSCN thin film is prepared in an aqueous electrolyte when the molar ratio of Cu 2+ to EDTA is 1∶1 and Cu 2+ to SCN - 4∶1. The average crystal size of CuSCN thin film is 50 nm, band gap ～3.8 eV and conductivity up to 0.8×10 -3 S/cm.

关 键 词：p-CuSCN薄膜 电化学沉积 EDTA 

分 类 号：O646.5[理学—物理化学]