深亚微米CMOS运算放大器的综合  

Synthesis of Deep-Submicron CMOS Operational Amplifier

作　　者：易婷[1] 洪志良[1] 

机构地区：[1]复旦大学微电子学系专用集成电路与系统国家重点实验室,上海200433

出　　处：《计算机辅助设计与图形学学报》2004年第12期1631-1639,共9页Journal of Computer-Aided Design & Computer Graphics

摘　　要：利用一种计算电路直流工作点的技术 ,并采用基于BSIM 3v3MOS模型的MOS管评估器来提高基于公式法进行电路综合的精度 ;同时提出一种综合策略 ,使得综合后得出的运算放大器在工艺波动和工作条件 (如电源电压和温度 )变化时 ,仍能满足性能要求 大量的实验结果表明 :文中方法可以快速综合出可制造的深亚微米CMOS运算放大器。A new way to calculate the operating point of the circuit is proposed and an encapsulated device evaluator based on BSIM3v3 MOS model is integrated, to improve the accuracy of equation based synthesis approach At the same time, a new strategy is presented to synthesize operational amplifier quickly, to meet all the specifications and is immune to all variation, including operating/manufacturing variation It has been demonstrated that this approach can synthesize manufacturable deep submicron CMOS operational amplifier in very short run time

关 键 词：CMOS运算放大器 模拟电路综合 直流工作点 可制造性电路设计 

分 类 号：TN402[电子电信—微电子学与固体电子学]