GaAsFET 4GHz电调振荡器的设计与制作  

Design and Preparation of GaAsFET 4GHz Oscillator

作　　者：李苏萍[1] 

机构地区：[1]中国电子科技集团总公司第五十五研究所,江苏南京210016

出　　处：《南京林业大学学报（自然科学版）》2005年第1期107-109,共3页Journal of Nanjing Forestry University：Natural Sciences Edition

摘　　要：比较了共源、共栅、共漏3种电路,并组合场效应管外延,设计出采用反沟道接法的共漏电路.分析了FET场效应管的特征频率、最大输出功率、单向功率增益和最大振荡频率等主要特性参数.通过制作和调试,完成的GaAsFET振荡器达到频带输出功率＞100mW,频率4～4.3 GHz的设计性能要求.所设计的电调振荡器误差小,性能稳定,具有良好的实际应用价值.There are three frequently encountered configurations,in the FET design,which are common source,gate and drain circuits.By comparing them carefully and making effective use of FET epitaxial growth,a reversed channel common-drain circuit has been chosen to make the GaAsFET oscillator.Some electrical specifications,were also analyzed systematically,such as characteristic frequency,maximum output power level,single pulse power gain and resonant frequency,etc.Through the processes of production and adjustment,the completed GaAsFET oscillator has met the demands of the project design.Its frequency band was from 4 GHz to 4.3 GHz and the output power level came up to more than 100 mW.The final oscillator has the features of tiny errors,great stability and a great practical value.

关 键 词：FET场效应管 变容管 振荡器 

分 类 号：TN12[电子电信—物理电子学]