浸渍离子层气相反应法制备CuInS_2薄膜  

PREPARATION OF CuInS_(2) THIN FILMS BY ION LAYER GAS REACTION

作　　者：邱继军[1] 靳正国[1] 石勇[1] 武卫兵[1] 程志捷[1] 

机构地区：[1]天津大学材料学院先进陶瓷与加工技术教育部重点实验室,天津300072

出　　处：《硅酸盐学报》2005年第1期26-31,共6页Journal of The Chinese Ceramic Society

基　　金：天津市自然科学基金(33802311)资助项目

摘　　要：以CH3CN为溶剂,CuCl2和InCl3为反应物,H2S为硫源,用浸渍离子层气相反应法制备CuInS2薄膜。研究混合前驱体溶液中Cu2+与In3+的离子浓度比[Cu2+]/[In3+]对薄膜晶体结构、化学组成、表面形貌、光学和电学性能的影响。当溶液中[Cu2+]/[In3+]在0.75～2.00范围内均可形成无杂质相、富S型立方闪锌矿结构的CuInS2薄膜。当[Cu2+]/[In3+]=1.50时,CuInS2薄膜接近其理想的化学计量组成,薄膜表面均匀性随着[Cu2+]/[In3+]的增加而降低。CuInS2薄膜的光吸收系数α均高于104cm-1,其禁带宽度Eg在1.30～1.40eV之间。制备的p型CuInS2半导体薄膜在室温下其表面暗电阻ρ随[Cu2+]/[In3+]的增加而有明显的降低趋势。Thin films of CuInS2 were prepared on glass substrates by ion layer gas reaction method using CH3CN as solvent, CuCl2 and InCl3 as reactants and H2S as sulfur source. Effects of [Cu2+]/[In3+] in the mixing precursor on the structure, chemical compositions, surface morphology, optical and electrical properties of CuInS2 thin films were investigated. X-ray diffraction and X-ray photoelectron spectroscope results show that S-rich CuInS2 thin films with the sphalerite structure are formed when [Cu2+]/[In3+] is in the range of 0.75 to 2.00 and there is no binary Cux-S and In2S3 impurities on the surface. Scanning electron microscope images indicate that the microstructure depends critically on the relative amounts of copper in the mixing precursor. When [Cu2+]/[In3+] = 1.50, the CuInS2 thin films approach to its stoichiometric composition and are uniform, compact and good in adhesion to the substrates. The absorption coefficient a of CuInS2 thin films is larger than 104 cm-1, and the band gap Eg is in the range of 1.30-1.40 eV. The dark resisitivity p of the thin films at room temperature obviously decreases when the [Cu2+]/[In3+] increases.

关 键 词：铜铟硫薄膜 浸渍离子层气相反应 半导体 

分 类 号：O614.242[理学—无机化学]