纳米结构TiO_2/聚3-甲基噻吩多孔膜电极光电化学研究  

Photoelectrochemical Study on the Nanostructured TiO_2/PMT Film Electrode

作　　者：郝彦忠[1] 武文俊[1] 

机构地区：[1]河北科技大学理学院

出　　处：《化学学报》2005年第3期215-218,共4页Acta Chimica Sinica

基　　金：国家自然科学基金(No. 20203008);河北省自然科学基金(No. 202351);河北省教育厅博士基金(No. 110611)资助项目

摘　　要：用光电流作用谱、光电流-电势图、紫外-可见吸收光谱等光电化学方法研究了导电玻璃(ITO)/TiO2/聚 3-甲基噻吩(PMT)电极的光电转换性质. 结果表明, PMT膜为p型半导体, 其禁带宽度为1.93 eV. 并通过循环伏安和光电化学方法确定了其导带位置为-3.44 eV, 价带为-5.37 eV, 在纳米 TiO2与 PMT 之间存在 p-n 异质结, ITO/TiO2/PMT 电极不仅提高了光电流, 而且使产生光电流的起始波长红移至>600 nm, 从而提高了宽禁带半导体的光电转换效率.The photon-current conversion properties of nanostructured TiO2/poly(3-methythiophene) (PMT) film electrode were studied by using the photocurrent action spectra, the photocurrent dependence of potential and UV-Vis absorption spectra. The bandgap of PMT film is 1.93 eV. The diagram of energy level of PMT film was determined with cyclic voltamogramm and photoelectrochemical method. The conduction band of PMT film is -3.44 eV. The p-n heterojunction existed in the TiO2/PMT film electrode, which favors the separation of electron-hole pairs. The nanostructure can enlarge the visible optical absorption region and obviously increase the photocurrent in visible region. The photocurrent threshold shifted to >600 and the photon-electron conversion efficiency could be improved.

关 键 词：光电化学 噻吩 光电流 TiO2 多孔膜 电势 禁带宽度 ITO 宽禁带半导体 PMT 

分 类 号：O657.1[理学—分析化学]