掺铒Al_2O_3薄膜的性能与制备  

Properties and Preparation of the Er-Doped Al_2O_3 Films

作　　者：黄开玉[1] 李国卿[1] 柳翠[1] 高景生[2] 宋琦[2] 王丽阁[1] 

机构地区：[1]大连理工大学三束材料改性国家重点实验室,辽宁大连116024 [2]大连理工大学物理系,辽宁大连116024

出　　处：《真空电子技术》2004年第6期11-14,18,共5页Vacuum Electronics

基　　金：国家863项目(2001AA338010)

摘　　要：简述了几种Al2O3薄膜的制备方法,使用中频孪生靶非平衡磁控溅射系统制备了掺铒Al2O3薄膜,并对其进行检测,结果表明该方法制备的薄膜适于制作光纤放大器。This article introduces some methods for preparing Al_2O_3 films.The Er-doped Al_2O_3 films were prepared by mid-frequency unbalance dual magnetron sputtering and their properties were measured. The results indicated that the films suit to be used as optical amplifier materials.

关 键 词：掺铒 AL2O3薄膜 光致发光 中频 磁控溅射 

分 类 号：O484[理学—固体物理]