ZrO_2掺杂及其工艺参数的对AC-PDP介质保护膜结晶取向的影响  

Influences on Orientation of Protective Layer in AC-PDP from Addition of ZrO_2 and Preparing Conditions

作　　者：刘柳[1] 刘纯亮[1] 郭滨刚[1] 范玉峰[1] 夏星[1] 

机构地区：[1]西安交通大学电子物理与器件教育部重点实验室,陕西西安710049

出　　处：《真空电子技术》2004年第6期45-47,共3页Vacuum Electronics

基　　金：教育部科学技术研究重大项目"彩色PDP介质保护膜的制备与工艺优化"资助(教技司[2002]78号;项目号0205)

摘　　要：在电子束蒸发镀膜工艺条件下,掺杂含量、基板温度和蒸镀速率都会对薄膜的结晶取向产生影响。掺杂含量会影响复合膜层的晶面取向和X射线衍射峰的强度,其中ZrO2掺杂比为0 2时,能获得相对最强的(111)晶面衍射峰。而对于复合介质保护膜的制备工艺,则是较低的基板温度和较高的蒸镀速率条件下,更容易形成(111)的晶面取向;较高的基板温度和较低的蒸镀速率条件下,则更容易形成(200)或(220)的晶面取向。It was found that the doping ratio of ZrO_2, the substrate temperature and the deposit rate influenced the preferred orientation of the composite protective layers prepared by electron-beam evaporation. The doping ratio of ZrO_2 had influence on both the preferred orientation of composite protective layers and the intensities of the X-ray diffractive peaks. The strongest (111) peak was got when the doping ratio was 0.2. For the composite protective layers, the lower substrate temperature and the faster deposit rate, the stronger of (111) peaks, the higher substrate temperature and the slower deposit rate, at the preferred orientation of (200) or (220) can be enhanced.

关 键 词：等离子体显示板 复合介质保护膜 氧化锆 结晶取向 

分 类 号：TN141.5[电子电信—物理电子学]