用ECR-CVD方法制备SiO_2薄膜  

Silicon Dioxide Films Prepared by ECR-CVD

作　　者：吴振宇[1] 杨银堂[1] 汪家友[1] 

机构地区：[1]西安电子科技大学微电子研究所宽禁带半导体材料与器件教育部重点实验室,陕西西安710071

出　　处：《真空电子技术》2004年第6期48-50,58,共4页Vacuum Electronics

摘　　要：本文在低温下利用ECR CVD技术沉积SiO2薄膜,讨论了沉积速率和薄膜折射率随工艺条件变化的关系。直径6英寸片内均匀性达到96%,重复性达到97%。对薄膜进行了FTIR光谱分析,1050cm-1处出现Si O Si伸缩振动吸收峰;仪器检测精度内,并未出现明显的Si H和N H吸收峰,表明薄膜具有很低的H含量。The technology of depositing SiO_2 films by ECR-CVD at substrate temperature ≤100 ℃ was developed. Variations of deposition rate and refractive index under different experimental conditions were discussed. Film uniformity about 96% within Φ6 inch silicon wafers and repeatability about 97% are achieved. FTIR spectra of the thin film show a large absorption due to Si-O-Si stretching vibration near 1 050 cm^(-1) in the regular interference pattern caused by the film thickness. Absorption peaks caused by Si-H and N-H stretching vibration are beyond detectable limit, which reveals very low hydrogen content in the film.

关 键 词：电子回旋共振 化学汽相沉积 氧化硅 薄膜 

分 类 号：O484.1[理学—固体物理]