化学浴法沉积SnS薄膜的机理分析  

An Analysis of Mechanism of SnS Thin Film Deposited by Chemical Bath

作　　者：胡永红[1] 雷天民[1] 李红生[1] 郑春蕊[1] 

机构地区：[1]西安理工大学自动化与信息工程学院,陕西西安710048

出　　处：《西安理工大学学报》2004年第4期392-395,共4页Journal of Xi'an University of Technology

基　　金：陕西省自然科学基金资助项目(2000X09);陕西省教委自然科学基金资助项目(01JK196)。

摘　　要：研究了以硫代乙酰胺、三乙醇胺、氯化亚锡和氨水作反应物,氯化铵作缓冲剂,采用化学浴法制备SnS薄膜的化学反应机理,分析了络合剂和氯化铵对反应的影响。结果表明,硫代乙酰胺和氯化亚锡主要为SnS薄膜的形成提供Sn2+与S2-,三乙醇胺作为络合剂可以维持溶液中Sn2+的浓度,氯化铵的加入可使反应液PH值在反应中平稳变化,有利于高品质薄膜的形成。This paper studies the deposition mechanism of SnS thin film by chemical bath using triethanolamine(TEA),thioacetamide,SnCl_2·2H_2O,ammonia(aqeous) as reactants and using NH_4Cl(aqeous) as buffer aqeous.The influence of the complexing agent and NH_4Cl on the chemical reaction was analyzed.The results indicate that the thioacetamide and the SnCl_2·2H_2O were the reaction source of Sn^(2+)and S^(2-)that can be used to form SnS thin films,and that the TEA as a complexing agent was able to maintain Sn^(2+)concentration in solution. Adding the NH_4Cl can make the PH value of the solution change smoothly in reaction, which was favorable for the formation of high quality SnS thin films.

关 键 词：SNS 薄膜 化学浴 氯化铵 

分 类 号：TQ03[化学工程] TN3[电子电信—物理电子学]