Cu中间层SiC_p/Al MMCs TLP扩散连接过程分析  

Analysis of process of SiC_p/Al MMCs TLP diffusion and bonding with Cu interlayer

作　　者：张剑锋[1] 姜世杭[1] 金朝阳[1] 王笃雄[1] 

机构地区：[1]扬州大学机械工程学院,江苏扬州225009

出　　处：《焊接技术》2005年第1期12-14,共3页Welding Technology

基　　金：江苏省教育厅资助项目(F0109190)

摘　　要：采用铜箔作中间层,在连接温度为853K、无压的条件下进行了瞬间液相连接,对TLP扩散连接过程及其动力学模型进行了分析,并对试验结果进行了的验证。结果表明:TLP扩散连接理论模型和试验结果之间还存在着一些差异,对等温凝固过程还需要进一步探讨。分析认为,AlMMCs中大量的晶界、亚晶界、位错等短路扩散通道的存在,直接影响TLP连接过程及其动力学。Transient liquid phase (TLP) bonding joints have been produced with copper interlayer when without press bonded at 853 K. TLP diffusion bonding process mechanisms and dynamic model have been discussed and compared with the experiment results. The results showed that there were some differences between the TLP diffusion and bonding theory models and experiment results, and the isothermal solidification process should be further investigated. It indicated that great diffusion channel such as along grain boundaries, sub-grain boundaries and dislocation among Al MMCs directly affected the progress of TLP bonding and dynamics.

关 键 词：钼基复合材料 瞬间液相连接 过程分析 

分 类 号：TG454[金属学及工艺—焊接]