锆离子轰击对纯锆腐蚀行为的影响  

INFLUENCE OF Zr-ION IMPLANTATION ON THE CORROSION BEHAVIOR OF ZIRCONIUM

作　　者：彭德全[1] 白新德[1] 陈宝山[2] 

机构地区：[1]清华大学材料科学与工程系,北京100084 [2]建中化工总公司,宜宾644000

出　　处：《金属学报》2005年第2期185-190,共6页Acta Metallurgica Sinica

基　　金：国家重点基础研究发展规划资助项目G2000067207-1

摘　　要：为了研究自离子轰击对纯锆耐蚀性的影响,用MEVVA源对纯锫样品进行了1×1015至2×1017ions/cm2的自离子轰击,注入温度为170℃,加速电压为50 kV.用X射线光电子谱(XPS)对注入表面各元素进行价态分析;用Auger电子能谱(AES)分析氧化膜厚度.三次极化测量用来评价轰击样品在1 mol/L H2SO4溶液中的耐蚀性.用掠射X射线衍射(GAXRD)分析自离子轰击造成的氧化膜相转变.研究表明: 5×1016 Zr ions/cm2自离子轰击样品的耐蚀性最好.对自离子轰击纯锆的腐蚀行为机理进行了讨论.In order to investigate the affect of self-ion bombardment on the aqueous corrosion behavior of zirconium, the specimens were implanted by zirconium ions with a fluence range from 1 X 10(15) to 2x10(17) ions/cm(2) at about 170 degrees C, using a MEVVA source at an extractation voltage of 50 kV. The valence of the surface layer was analyzed by X-ray photoemission spectroscopy (XPS); the thickness of the oxide film was measured by Auger electron spectroscopy (AES). Three-sweep potentiodynamic polarization measurement was used to value the aqueous corrosion resistance of implanted zirconium in 1 mol/L H2SO4 solution. Glancing angle X-ray diffraction (GAXRD) was employed to determine the phase transformation due to the self-ion implantation in the oxide films. It was found that the aqueous corrosion resistance of zirconium implanted with 5 x 10(16) Zr ions/cm(2) is the best in all the samples. Finally, the mechanism of the corrosion behavior of the self-ion implanted zirconium is discussed.

关 键 词：纯锆 耐蚀性 自离子轰击 动电位极化 相转变 

分 类 号：TG146.4[一般工业技术—材料科学与工程]