用热蒸发法制备CdS纳米带  

Manufacture of CdS Nano-ribbons by Thermal Evaporation

作　　者：刘春霞[1] 严文[1] 范新会[1] 刘建刚[1] 

机构地区：[1]西安工业学院材料与化工学院,陕西西安710032

出　　处：《材料科学与工程学报》2005年第1期102-104,共3页Journal of Materials Science and Engineering

基　　金：教育部优秀青年教师奖励计划资助项目 ;陕西省自然科学基金 2 0 0 1C56;省教育厅自然科学专项;省纳米材料重点实验室纳米专项资助项目 .

摘　　要：在外加电场的作用下 ,用物理热蒸发法制备出了定向生长的硫化镉纳米带。借助扫描电子显微镜(SEM)、X射线能谱分析仪 (EDX)和透射电镜 (TEM)对硫化镉纳米带的形貌、成分和晶体结构进行了分析。结果表明 :当外加电场为 4 0 0V ,蒸发温度为 1 1 5 0℃ ,环境压力为 1 5 0torr,气体流量为 5 0SCCM时 ,可制备出平均宽度为 2 5 μm ,厚80nm ,长达几毫米的定向生长的硫化镉纳米带。With the use of an electrical field , CdS nano-ribbons have been successfully produced by thermal evaporation of the powder of CdS and CdO mixture. The morphology, composition and crystal structure of the nano-ribbons have also been analyzed by scanning electron microscopy(SEM)、X-ray energy dispers spectrum(EDX) attached to SEM and transmission electron microscopy(TEM).The results showed that at the direct current of(DC) 400 V, the evaporation temperature of 1150 ℃,ambient pressure of 150 torr, gas flow of 50 SCCM, the CdS nano-ribbons with the size of 1-5mm×25μm×80nm can be easily obtained.

关 键 词：物理热蒸发法 外加电场 硫化镉纳米带 

分 类 号：TB383[一般工业技术—材料科学与工程]