热蒸发锌粉法制备半导体氧化锌纳米线的研究  

Synthesis of Semiconductor Zinc Oxide Nanowires by Thermally Evaporating Zn Powders

作　　者：刘建刚[1] 范新会[1] 严文[1] 于灵敏[1] 刘春霞[1] 

机构地区：[1]西安工业学院材料与化工学院,陕西西安710032

出　　处：《材料科学与工程学报》2005年第1期109-111,共3页Journal of Materials Science and Engineering

基　　金：教育部优秀青年教师奖励计划;陕西省教育厅自然科学专项;陕西省纳米材料重点实验室纳米专项资助项目 .

摘　　要：采用热蒸发锌 (Zn)粉的方法 ,制备出高产量的由半导体氧化锌纳米线组成的蒲公英花状和四角锥状纳米结构。利用SEM、TEM和X射线衍射对产物的形貌及结构进行了分析。结果表明 ,所生成的是具有六方结构的单晶ZnO纳米线。纳米线长约 5 1 0 μm ,根部直径较粗 ,约 1 1 0 1 2 0nm ;梢部较细 ,约 2 5 30nm ,其生长机制为气 -固 (VS)机制。Dandelion flower-shaped and tetrapod-shaped structures composed from semiconductor single crystalline zinc oxide (ZnO) nanowires have been synthesized in bulk quantities by thermally evaporating Zn powders. XRD proves that the nanowires have the hexagonal structure of ZnO. SEM and TEM investigations showed that the length of ZnO nanowires is in the range of 8-10μm,and their diameter is about 110-120nm at the bottom, but about 25-30nm at the tip. The growth of ZnO nanowires is controlled by a VS mechanism.

关 键 词：热蒸发法 氧化锌纳米线 气-固机制 

分 类 号：TB383[一般工业技术—材料科学与工程]