有机电致发光器件中由缓冲层薄膜诱导产生的空穴传输层薄膜的结晶化(英文)  

Induced Crystallization of Hole Transport Layer by Buffer Layer in Organic Light Emitting Diodes

作　　者：徐芹芹[1] 张吉东[1] 陈江山[1] 马东阁[1] 闫东航[1] 

机构地区：[1]中国科学院长春应用化学研究所高分子物理与化学国家重点实验室,吉林长春130022

出　　处：《发光学报》2005年第1期89-94,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金(90301008,20025413);国家重点基础研究发展计划项目基金(2002CB613404)资助项目~~

摘　　要：有机薄膜层的结晶是有机电致发光器件衰减的主要机理之一。研究发现以CuPc做为缓冲层时比没有缓冲层时NPB薄膜更容易结晶,CuPc对NPB薄膜具有诱导结晶作用。通过原子力显微镜(AFM)以及宽角X射线衍射(WAXRD)详细研究了不同厚度、不同颗粒大小的缓冲层CuPc薄膜对空穴传输层NPB薄膜的结晶诱导作用。这个发现为以下结论提供了证据, 以CuPc薄膜做为缓冲层的OLED器件的长期衰减可部分归结于由缓冲层CuPc引起的空穴传输层NPB薄膜的结晶。Crystallization of organic thin films is one of the main degradation mechanisms of organic light emitting diodes (OLEDs). The induced crystallization of N,N′-di(naphthalene-1-yl) N,N′-diphenyl-benzidine (NPB) thin films by copper phthalocyanine (CuPc) buffer layer with different thickness and nucleus sizes was studied by atomic force microscopy (AFM) and wide angle X-ray diffraction (WAXRD). It was found that the NPB with CuPc as buffer layer crystallized more easily than that without CuPc buffer layer, and CuPc films can induce the crystallization of NPB films. These results may provide evidence that the long-term degradation of an OLED with CuPc as buffer layer can be partially attributed to the crystallization of the hole-transporting layer NPB induced by CuPc.

关 键 词：有机薄膜 结晶 AFM 衰减 有机电致发光器件 

分 类 号：TN383.1[电子电信—物理电子学] TN873.3