新型AgInSbTe相变薄膜的结晶活化能研究  

Activation Energy for the Crystallization of the New Type AgInSbTe Phase Change Films

作　　者：张广军[1] 顾冬红[1] 李青会[1] 干福熹[1] 刘音诗 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800 [2]成都先锋材料有限公司,成都611731

出　　处：《无机材料学报》2005年第1期230-234,共5页Journal of Inorganic Materials

基　　金：国家自然科学基金(60207005)

摘　　要：利用磁控溅射法制备了新型AgInSbTe相变薄膜,热处理前后的X射线衍射(XRD)表明了薄膜在热作用下从非晶态转变到晶态.通过非晶态薄膜粉末的示差扫描量热(DSC)实验测定了不同升温速率条件下的结晶峰温度,计算了粉末的摩尔结晶活化能、原子激活能和频率因子.从结晶活化能E可以判断出新型AgInSbTe相变薄膜具有较高的结晶速度,可以用于高速可擦重写相变光盘.A new type AgInSbTe phase change film was prepared by direct magnetron sputtering. X-ray diffraction (XRD) spectra of the film in as-deposited and heat-treated states show the film changed from amorphous to crystalline states due to heat-treatment. By using differential scanning calorimetry (DSC) data of the amorphous film materials, measuring the peak temperature of crystallization at different heating rates, the mol activation energies for crystallization and frequency factors were calculated. By judging from the mol activation energies, the new type AgInSbTe phase change film has a high value of activation energies for crystallization and will be suitable to the high-speed phase change disks for the direct overwrite.

关 键 词：新型AgInSbTe相变薄膜 结晶动力学 XRD DSC 

分 类 号：O795[理学—晶体学]