CuO、V_2O_5掺杂(1-x)BiNbO_(4-x)ZnTaO_6的介电性能  

Study on Dielectric Properties of (1–x) BiNbO_(4-x)ZnTaO_6 Ceramics with CuO-V_2O_5 Additive

作　　者：袁力[1] 丁士华[1] 姚熹[1] 

机构地区：[1]同济大学功能材料研究所,上海200092

出　　处：《电子元件与材料》2005年第3期20-22,共3页Electronic Components And Materials

基　　金：国家高新技术发展计划资助项目(2001AA325110);国家重点基础研究发展计划资助项目(2002CB613302);上海市重点建设学科资助项目

摘　　要：对CuO、V2O5掺杂的(1–x)BiNbO4-xZnTaO6(x=0.05～0.15)陶瓷体系结构和介电性能进行了研究。试验结果表明,940℃以下,体系为斜方BiNbO4和斜方ZnTaO6的复相结构;掺杂CuO、V2O5使得体系在较低温度下即可烧结成瓷,随着(1–x)BiNbO4-xZnTaO6体系中x的增加,陶瓷表观密度上升,εr下降,温度系数、损耗则呈增加趋势。x=0.05,910℃烧结保温2h有较好的微波性能,εr约为40,Q·f值达25000GHz。Structure and dielectric properties of the group of (1–x ) BiNbO4-xZnTaO6 (x = 0.05□0.15) composites , with doped CuO and V2O5 were studied. It is found that the orth BiNbO4 and orth ZnTaO6 are predominant in this system under 940℃. Density, dielectric temperature coefficiency and dielectric loss of (1–x) BiNbO4-xZnTaO6 composites were found to increase while dielectric constant decreases with increasing of the x value. The system of (1–x) BiNbO4-xZnTaO6 ceramics with doped 0.2 wt%CuO and 0.2 wt% V2O5, sintered at 910℃ have the optimum microwave dielectric properties:εr=40, Q·f = 25 000 GHz.

关 键 词：无机非金属材料 微波介质陶瓷 介电性能 低温烧结 复相 

分 类 号：TM28[一般工业技术—材料科学与工程] TN61[电气工程—电工理论与新技术]