类锂硅离子X射线激光谱线宽度和电子密度的空间分布  

SPATIAL DISTRIBUTIONS OF X-RAY LASING LINEWIDTH AND ELECTRON DENSITY IN A Li-LIKE SILICON PLASMA

作　　者：陆培祥[1] 张正泉[1] 徐至展[1] 范品忠[1] 沈百飞[1] 陈时胜[1] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800

出　　处：《物理学报》1993年第2期273-276,共4页Acta Physica Sinica

基　　金：中国科学院重大项目;国家自然科学基金;中国高技术发展计划(863计划)资助的课题

摘　　要：通过分析类锂硅离子X射线激光谱线宽度的空间分布特性,表明斯塔克展宽是主要的展宽机制;由此得到增益介质电子密度的空间分布显示增益区电子密度约在10^(19)/cm^3左右,对应最大增益处的线宽为0.21A,电子密度为2.9×10^(19)/cm^3。Through analysizing the spatial distribution characteristics of the linewidth of Li-like si-licon ions X-ray lasers, we show that Stark broadening is the main line broadening me-chanism for Li-like Si11+ ions recombine X-ray laser. Spatial distribution of the electron den-sity of gain medium obtained by Stark brcadening shows that the electron density in the gain region is about 1019/cm3, and the lasing linewidth and electron density are 0.21 A and 2.9 × l019/cm3 at the gain maximum respectively.

关 键 词：X射线激光器 谱线宽度 电子密度 硅 

分 类 号：TN241[电子电信—物理电子学]