高Tc氧化物超导体的元素替代效应(Ⅱ)  

EFFECTS OF ATOMIC SUBSTITUTIONS IN THE HIGH-Tc SUPERCONDUCTING OXIDES (II)

作　　者：谭明秋[1] 王劲松[1] 张其瑞[1] 王楠林[2] 

机构地区：[1]浙江大学物理系,杭州310027 [2]中国科技大学物理系,合肥230026

出　　处：《物理学进展》1993年第3期405-422,共18页Progress In Physics

摘　　要：本文对Bi-系高Tc氧化物超导体的元素替代效应进行了系统的评述。对由于元素替代所引起的晶体结构、氧含量、空穴浓度和超导临界温度等参量的变化进行了重点讨论。总结出元素替代的两种机制,即CuO_2平面外原子格点上以改变迁移载流子浓度为主要特征的和在CuO_2平面内Cu的格点上以破坏局部磁有序、产生直接拆对作用为特征的替代效应。The effects of atomic substitution in the Bi-based high-Tc superconducting oxides have been reviewed. The emphasis is paid on the change of crystalline structure, oxygen content, hole concentration, and superconducting critical temperature, etc., which is caused by partial substitution on different atomic sites. It is concluded that there are two types of mechanism which affect the superconducting properties of substituted samples. Namely the substitution outside CuO2 planes changes the mobile carrier concentration and the substitution of Cu sites inside CuO2 planes leads to destroying the local magnetic ordering, producing direct Copper pair-breaking.

关 键 词：超导体 氧化物 元素替代效应 铋系 

分 类 号：O511.1[理学—低温物理]