N_2分子二聚物在352.3nm处增益特性研究  

Gain characteristics of N_2 molecular dimer at 352.3 nm

作　　者：申作春[1] 鲁建业[1] 高惠德[1] 

机构地区：[1]哈尔滨工业大学光电子技术研究所,黑龙江哈尔滨150001

出　　处：《光学精密工程》2005年第1期10-15,共6页Optics and Precision Engineering

基　　金：国家自然科学基金(No.69678006);哈尔滨工业大学校基金(No.HIT.2002.15)资助项目

摘　　要：利用微波放电激励高纯氮,并采用放大自发辐射法,研究了不同微波激励功率和不同N2气压条件下N2分子二聚物352.3 nm辐射的增益特性.给出了沿放电管轴线N2分子二聚物352.3 nm辐射的小信号增益系数随微波激励功率和充入放电管N2气压变化的规律.研究结果表明当微波功率大于100 W时,充入N2气压在330～1 800 Pa范围内,N2分子二聚物在352.3 nm处存在受激辐射特性.当微波功率为500 W,充入放电管的N2气压为1 100 Pa时,N2分子二聚物352.3 nm辐射的小信号增益系数最大为1.08% cm-1.另外,还给出了N2分子二聚物352.3 nm辐射增益沿放电管径向分布情况. N2分子二聚物352.3 nm辐射的增益系数在放电管中心最小,接近管壁时最大.Utilizing microwave discharge to excite the high pure nitrogen, and adopting the method of amplified spontaneous emission, the gain characteristics of N2 molecular dimer at 352.3 nm is studied under different microwave exciting power and N2 pressure. The law that little signal gain coefficients of N2 molecular dimer at 352.3 nm change with microwave exciting power and N2 pressure inside discharge tube, is given along the axis of discharge tube. The results indicate that the stimulated emission characteristics of N2 molecular dimer at 352.3 nm exist, when the microwave power is greater than 100 W, and N2 pressure in the range from 330 to 1800 Pa. When microwave power is 500 W N2 pressure is 1100 Pa, the maximum little signal gain coefficient of N2 molecular dimer at 352.3 nm is 1.08% cm- along the axis of discharge tube. In addition, the gain distribution of N2 molecular dimer at 352.3 nm along the radial direction of discharge tube is also given. The gain coefficient of N2 molecular dimer at 352.3 nm is minimum at the centre of discharge tube, and maximum at the position close to the wall.

关 键 词：放大自发辐射 二聚物 增益 

分 类 号：TN248.21[电子电信—物理电子学]