深亚微米LDD CMOS集成数值模型及环振电路的瞬态模拟  

Deep Submicron LDD CMOS Integrated Numerical Model and Ring Oscillator Circuit Transient Simulation

作　　者：余山 黄敞[2] 

机构地区：[1]北京计算机应用和仿真技术研究所 [2]陕西微电子学研究所

出　　处：《系统工程与电子技术》1993年第9期1-7,共7页Systems Engineering and Electronics

摘　　要：根据载流子总量分析方法,建立了深亚微米CMOS集成数值模型,把电路的端特性与器件内部载流子的运动状态联系起来,解决了经验解析公式在亚微米时的局限,完成了对0.20μm LDD CMOS环振电路的瞬态分析,并与实际制做的0.5μmCMOS环振电路进行了比较,最后讨论了集成数值模型在建立亚微米库方面的应用。Deep submicron CMOS integrated numerical model, which integrates circuit output characteristics and carrier's state in device and can eliminate the empirical analytical model's drawbacks, has been established based on total quantity carrier analysis method. 0.20μm LDD CMOS ring oscillator circuit transient analysis is completed by this device and circuit integrated numerical model and simulation. The comparison of the simulation results and the experiment results of 0.50μm CMOS ring oscillator circuit fabrication is also conducted. Finally the application of this integrated numerical model in establishment of submicron cell library is discussed.

关 键 词：场效应器件 电路分析 数值模拟 

分 类 号：TN386[电子电信—物理电子学]