微波大功率晶体管基极镇流方法研究  

Microwave High-Power Transistor Base Ballast Method Research

作　　者：郭本青[1] 张庆中[1] 李玉龙[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,成都610054

出　　处：《电子器件》2004年第4期599-602,共4页Chinese Journal of Electron Devices

基　　金：绵阳海特微电子有限公司资助

摘　　要：长期以来 ,解决微波功率晶体管的电流集中问题的通用做法是使用发射极镇流电阻 ,以及 PTC,CTR热敏电阻等无源器件。区别于前者 ,本文提出一种实时有效的基极镇流解决方案 ,采用传感器探测结温 ,后续触发装置触发功率BJT基极发射极之间的镇流 MOS管 ,来完成微波功率晶体管的过温保护 ,和常温解除功能 ,最终实现对功率器件的实时有效保护 ,使器件同时具备更高的可靠性 。For a long time, a common and popular method to solve current convergence problem of microwave power transistor is using emitter ballasting resistor, such as PTC, CTR thermistor, passive devices etc. This article gives a real-time and effective base ballast maneuver, which is obviously different from the former. It uses a sensor to detect junction temperature, and a trigger behind triggers ballast MOSFET between base and emitter of the BJT. All of these can realize protection for the BJT in high temperature and normality removal and make device behavior both much higher reliability and better electrical performance.

关 键 词：微波大功率晶体管 电流集中 可靠性 施密特触发器 

分 类 号：TN385[电子电信—物理电子学]