GaAs/AlAs超晶格低温光伏特性  

The Photovoltaic Properties of GaAs/AlAs Superlattices at Low Temperatures

作　　者：朱文章[1] 刘士毅[1] 陈朝[1] 

机构地区：[1]厦门大学物理学系

出　　处：《厦门大学学报（自然科学版）》1993年第1期39-44,共6页Journal of Xiamen University：Natural Science

基　　金：半导体超晶格国家重点实验室项目

摘　　要：在18～300K温度之内,测量了GaAs/AlA_3超晶格在不同温度下的光伏谱,采用Kronig-Penney模型的新形式计算了势阱中导带子带和价带子带的位置,对观测到的本征激子跃迁峰进行辨认,低温下的光伏谱反映了超晶格台阶式的二维状态密度分布。The photovoltage spectra of GaAs/AlAs superlattices have been measured at different temperatures ranging from 18 K to 300 K. The levels of the subbands in the potential well are calculated by using the new formalism of Kronig-Penney modes. The observed intrinsic exciton peaks are identified according to the calculated results. At low temperatures, the photovoltage spectra reflect the steplike distribution of two-dimensional state density of superlattice.

关 键 词：超晶格 光伏谱 状态密度 

分 类 号：TN304.23[电子电信—物理电子学]