恒压应力下超薄Si_3N_4/SiO_2叠层栅介质与SiO_2栅介质寿命比较  

Lifetime Comparison Between Ultra-Thin N/O Stack and SiO_2 Gate Dielectrics Under Constant Vlotage Stress

作　　者：林钢[1] 徐秋霞[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《Journal of Semiconductors》2004年第12期1717-1721,共5页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目 (批准号 :G2 0 0 0 3 65 0 4)~~

摘　　要：以等效氧化层厚度 (EOT)同为 2 .1nm的纯 Si O2 栅介质和 Si3N4 / Si O2 叠层栅介质为例 ,给出了恒定电压应力下超薄栅介质寿命预测的一般方法 ,并在此基础上比较了纯 Si O2 栅介质和 Si3N4 / Si O2 叠层栅介质在恒压应力下的寿命 .结果表明 ,Si3N4 / Si O2 叠层栅介质比同样 EOT的纯 Si O2 栅介质有更长的寿命 ,这说明 Si3N4 / Si O2 叠层栅介质有更高的可靠性 .Ultra-thin N/O stack gate dielectrics and pure oxide gate dielectrics with the same EOT (2.1nm) are used as the samples.A common way for the ultra-thin gate dielectrics lifetime projection with the CVS method is given.Based on this,the lifetime is compared between the ultra-thin N/O stack gate dielectrics and pure oxide gate dielectrics .The result shows that N/O stack gate dielectrics have much longer lifetime than pure oxide gate dielectrics of the same EOT,which also indicates that N/O stack gate dielectrics have better reliability than the pure oxide gate dielectrics do.

关 键 词：恒压应力 超薄Si3N4/SiO2 叠层栅介质 超薄SiO2栅介质 栅介质寿命预测 

分 类 号：TN432[电子电信—微电子学与固体电子学]