Ta_2O_5对掺杂的TiO_2压敏陶瓷电性能的影响  

Influence of Ta_2O_5 on electrical properties of doped TiO_2 varistor ceramics

作　　者：孟凡明[1] 孙兆奇[2] 

机构地区：[1]安徽大学物理与材料科学学院,安徽合肥230039 [2]安徽大学信息材料与器件重点实验室,安徽合肥230039

出　　处：《合肥工业大学学报（自然科学版）》2005年第1期53-56,共4页Journal of Hefei University of Technology：Natural Science

基　　金：国家自然科学基金资助项目(59972001);安徽省自然科学基金资助项目(01044901);安徽省教育厅科研基金资助项目

摘　　要：基于典型的陶瓷工艺制备试样,通过对样品的压敏特性、电容频谱特性的测定及势垒高度φb的计算,研究了Ta2O5对掺杂(Ba,Bi,Si,Ta)的TiO2压敏陶瓷的压敏特性及电容特性的影响。结果表明,随着Ta2O5的摩尔分数的增加,样品的压敏电压、非线性系数和视在介电常数呈现一定的变化规律,掺入摩尔分数为0.1%的Ta2O5样品显示出最低的压敏电压和最高的视在介电常数,并从理论上进行了分析。综合考虑材料的各种电性能参数,尤其是压敏电压低压化的需求,Ta2O5掺杂摩尔分数在0.1%左右为宜。The samples were made by using the typical ceramic art. The electrical properties such as breakdown voltage and electric capacity of the doped TiO_2varistor ceramics with various Ta_2O_5content were investigated by some related measurement and calculation. It is found that the breakdown voltage, nonlinear exponent and apparent dielectric constant of the samples showed definite regularity respectively when the Ta_2O_5content altered. Among the samples, an optimal composition doped with Ta_2O_5in a mole fraction of 0.1% exhibited the lowest breakdown voltage and the highest apparent dielectric constant, and some analysis was given. The optimal doping amount of Ta_2O_5in the mole fraction is about 0.1% as various characteristics of TiO_2varistor ceramics are considered comprehensively.

关 键 词：TIO2压敏陶瓷 压敏电压 非线性系数 电容量 

分 类 号：TN304[电子电信—物理电子学] TN379