BGO晶体的缺陷与性能—(1)缺陷及其形成  

Defects and Performances of Bi_4Ge_3O_(12) Crystal—(1) Defects and Its Formation

作　　者：姚冬敏[1] 齐雪君[1] 宋桂兰[1] 袁兰英[1] 仲维卓[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海201800

出　　处：《人工晶体学报》2004年第6期940-944,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金 (No .5 0 331 0 40 ) ;中国科学院创新工程 (KJCXZ SW 1 0 5 0 3)资助项目

摘　　要：下降法生长的BGO晶体中存在几种典型的宏观缺陷。用光学显微镜和电子探针对宏观缺陷内的包裹体进行研究发现 :包裹体大部分为固态包裹物 ;不同宏观缺陷内的包裹体 ,其形状、大小和成份都具有典型特征。Several types of macro-defects existed in the BGO crystal grown by the Bridgman method. The inclusions in the macro-defects were studied with optical microscopy and electron microprobe analysis. It was found that most of the inclusions are solid phase. The shape, size and ingredient of inclusions in different macro-defects have typical characteristics. In this paper the properties and formation of the inclusions are discussed.

关 键 词：宏观缺陷 包裹物 BGO晶体 固态 性质 包裹体 发现 形成 电子探针 下降 

分 类 号：O771[理学—晶体学] O77