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作 者:崔旭高[1] 夏洪旭[1] 张世远[1] 杨名[2] 康琳[2] 杨森祖[2]
机构地区:[1]南京大学固体微结构国家重点实验室物理系,江苏南京210093 [2]南京大学电子科学与工程系,江苏南京210093
出 处:《中国稀土学报》2003年第1期31-35,共5页Journal of the Chinese Society of Rare Earths
基 金:国家973项目(G1999064508);国家自然科学基金资助项目[19890310(4)]
摘 要:采用固相烧结法和脉冲激光沉积法分别制备了钙态矿型锰氧化物Nd1-xSrxMnO3(x=0.1,0.2,0.3,0.4,0.5)大块多晶和Nd0.7Sr0.3MnO3在(100)LaAlO3基片上的单取向薄膜样品,分别研究了这些样品的磁电阻效应。研究表明,在多晶样品中,x=0.3时具有最大的磁电阻比,其值在240K和1T磁场下可达24.2%。对于同一成分的外延薄膜,发现磁电阻随着沉积时基片温度Ts的升高而下降,当Ts=500℃时的制备态薄膜在同样条件下的磁电阻可达84%,随着外加磁场增大到5T,磁电阻将线性增大到275%。并讨论了造成单取向膜和块材磁电阻不同的原因。The polycrystalline samples of Nd1xSrxMnO3 with x ranging from 0.1 to 0.5 and epitxial thin film of Nd0.7Sr0.3MnO3 were prepared by conversational solidstate reaction in air, and pulse laserdeposition (PLD) method, respectively. The colossal magnetoresistance effect of these samples was studied. The results indicate that in this series of polycrystalline samples, a maximum MR of ~24.2% is obtained under a magnetic field of 1 T at the temperature of 240 K for x=0.3. For epitaxial thin films with the same composition, it is found that their MR measured under the same condition has a maximum up to 84% at the deposition temperature of Ts =500 ℃ and decreases with increasing Ts. With increasing the applied field to 5 T, the MR of the film increases to 275% linearly at the temperature of 240 K. Finally, the possible reason causing the difference in MR between bulk materials and thin films was discussed.
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