CVD金刚石薄膜的掺硼研究  

The research of Boron-Doped diamond film

作　　者：潘鹏[1] 常明[1] 朱亚东[1] 

机构地区：[1]天津理工大学光电信息与电子工程系,天津300191

出　　处：《天津理工大学学报》2005年第1期43-45,共3页Journal of Tianjin University of Technology

基　　金：天津市自然科学基金资助项目(023602511);天津市自然科学重点基金资助项目(00380021).

摘　　要：主要介绍硼掺杂金刚石膜的生长.采用热灯丝CVD法在硅上制备金刚石薄膜,采用三氧化二硼制备硼掺杂金刚石膜.利用拉曼光谱分析硼掺杂金刚石膜的生长情况.结果表明:硼的掺杂质量分数随生长时间延长而增大;利用SEM观察硼掺杂金刚石膜的表面晶粒变小;利用银浆在掺杂金刚石膜表面制备电极,测试电流随温度升高而变大.Boron-Doped Diamond (BDD) film of deposition is discussed. We use hot-filament-assisted chemical vapor deposition (HF-CVD) to prepare boron-doped diamond film on Si with B 2O 3. BDD film's growth condition was studied with Raman spectroscopy. It shows that the boron concentration in BDD goes up along with time. We find that BDD's block becomes small by SEM; Ag is made on BDD surface,the current passing two points of Ag is measured at different temperatures.

关 键 词：金刚石薄膜 热灯丝CVD 硼 拉曼光谱 

分 类 号：TN304.18[电子电信—物理电子学]